MV-3V4G3/US Samsung 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Very Low Profile (VLP) Memory Module

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MV-3V4G3/US Samsung 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Very Low Profile (VLP) Memory Module

$57.00
$71.25
About this item
  • Product Part Number
    Part Number:
    MV-3V4G3/US
  • Manufacturer
    Manufacturer:
    Samsung
  • Condition
    Condition:
    Refurbished
  • Availability
    Availability:
    In Stock
Product Description
This high‑performance DDR3 memory module delivers reliable, low‑power operation ideal for compact systems and servers. Its dual‑rank architecture provides consistent speed and stability, while the very low‑profile design fits tight spaces without compromising airflow. Engineered for seamless integration into modern motherboards, it supports demanding applications with robust memory performance. The low‑voltage, unbuffered design reduces power consumption and heat output, extending component lifespan. Built with reliability in mind, the module guarantees consistent data transfer without the need for additional error‑correction hardware, making it an excellent choice for cost‑effective, high‑performance builds.
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